ECE 462 - Introduction to Basic Semiconductor Devices and Associated Circuit Models

Introduces the fundamental device material that is basic to electronics-engineering. Initial concepts include diamond (zinc-blende) crystal structure, holes, free electrons, drift, diffusion, and the energy band model. These are then used to explore p-n junction and MOS structures including the extraction of SPICE model parameters. A more detailed look at reasons behind the characteristics of p-n and Schottky diodes, MOSFETs and BJTs follows. The goal is an understanding of the behavior of the basic semiconductor devices, their limitations and their models. If time permits additional topics from the following list will be discussed: Power Semiconductors, Photonic Devices, Semiconductor Reliability. Lec 3.

Prerequisites: CHY 121 and PHY 122; co-requisite MAT 258.

Credits: 3